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DMG8822UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
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Case: TSSOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.039 grams (approximate)
D1
D2
G1
G2
1
2
3
D
S1
S1
D
S2
S2
8
7
6
TOP VIEW
BOTTOM VIEW
4
G1
Top View
G2
5
S1
Internal Schematic
S2
Pin Configuration
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8
Unit
V
V
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
4.9
3.9
31
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T A = 25°C
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
P D
R θ JA
T J , T STG
Value
0.87
143
-55 to +150
Unit
W
°C/W
°C
2. Repetitive rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
1 of 6
www.diodes.com
June 2009
? Diodes Incorporated
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